BF998,215

BF998, BF998,215, BF998E6327, BF998R,215, BF998RE6327, BF998WR,115

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Description

Parameters

Parameter		BF998,215	BF998E6327	BF998R,215	BF998RE6327	BF998WR,115
IC package	Package	SOT-143, SOT-143B, TO-253AA	SOT-143, SOT-143B, TO-253AA	SOT-143R	SOT-143R	SOT-343R
Manufacturer	Manufacturer	NXP Semiconductors	Infineon Technologies	NXP Semiconductors	Infineon Technologies	NXP Semiconductors
Noise factor	N_F	600 mdB	2.8 dB	600 mdB	2.8 dB	600 mdB
Continuous voltage between drain and source	U_DSS	12 V
Continuous drain current	I_DSS	30 mA
Technology of field-effect transistor	Technology	MOSFET Dual Gate	MOSFET	MOSFET Dual Gate	MOSFET	MOSFET Dual Gate
FET channel type	Channel	N-ch
Frequency	f	200 MHz	45 MHz	200 MHz	45 MHz	200 MHz
Number of elements of the same type in single chip	Elements
Amplification gain (out-to-in ratio)	KdB	(not set)	28 dB	(not set)	28 dB	(not set)