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| Parameter | BF1211,215 | BF1211R,215 | BF1211WR,115 | |
|---|---|---|---|---|
IC package | Package | SOT-143, SOT-143B, TO-253AA | SC-61B | CMPAK-4 |
Manufacturer | Manufacturer | NXP Semiconductors | ||
Noise factor | NF | 900 mdB | ||
Continuous voltage between drain and source | UDSS | 6 V | ||
Continuous drain current | IDSS | 30 mA | ||
Technology of field-effect transistor | Technology | MOSFET Dual Gate | ||
FET channel type | Channel | N-ch | ||
Frequency | f | 400 MHz | ||
Number of elements of the same type in single chip | Elements | |||
Amplification gain (out-to-in ratio) | KdB | 29 dB | ||