This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | 3SK263-5-TG-E | |
|---|---|---|
Manufacturer | Manufacturer | SANYO Semiconductor (U.S.A) Co |
Noise factor | NF | 2.2 dB |
Continuous voltage between drain and source | UDSS | 15 V |
Continuous drain current | IDSS | 30 mA |
Technology of field-effect transistor | Technology | MOSFET Dual Gate |
FET channel type | Channel | N-ch |
Frequency | f | 200 MHz |
Number of elements of the same type in single chip | Elements | |
Amplification gain (out-to-in ratio) | KdB | 21 dB |