ZXMN3A06DN8TC

ZXMN3A06, ZXMN3A06DN8TA, ZXMN3A06DN8TC, ZXMN3A06N8TA

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Description

Parameters

ParameterZXMN3A06DN8TAZXMN3A06DN8TCZXMN3A06N8TA
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
Diodes/Zetex
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.25 W<1.25 W(not set)
Input capacitance of field effect transistor
Ciss
796 pFVds = 25V796 pFVds = 25V(not set)
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<4.9 A<4.9 A(not set)
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<35 mΩId, Vgs = 9A, 10V<35 mΩId, Vgs = 9A, 10V(not set)
Gate charge
QG
17.5 nCVgs = 10V17.5 nCVgs = 10V(not set)
FET Feature
FET Feature
Logic Level GateLogic Level GateStandard
Number of elements of the same type in single chip
Elements
2