ZXMD65P02

ZXMD65P02, ZXMD65P02N8TA, ZXMD65P02N8TC

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Description

Parameters

ParameterZXMD65P02N8TAZXMD65P02N8TC
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
Diodes/Zetex
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.25 W
Input capacitance of field effect transistor
Ciss
960 pFVds = 15V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<4 A
FET channel type
Channel
2 P-Channel (Dual)
Channel resistance at ON state
RDS-ON
<50 mΩId, Vgs = 2.9A, 4.5V
Gate charge
QG
20 nCVgs = 4.5V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2