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| Parameter | US6M2TR | |
|---|---|---|
IC package | Package | TUMT6 |
Manufacturer | Manufacturer | Rohm Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <1 W |
Input capacitance of field effect transistor | Ciss | 80 pFVds = 10V |
Continuous drain current | IDSS | <1.5 A |
FET channel type | Channel | N and P-Channel |
Channel resistance at ON state | RDS-ON | <240 mΩId, Vgs = 1.5A, 4.5V |
Gate charge | QG | 2.2 nCVgs = 4.5V |
FET Feature | FET Feature | Standard |
Number of elements of the same type in single chip | Elements | 2 |
Continuous drain current of 2nd transistor | IDSS2 | <1 A |