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| Parameter | TT8J21TR | |
|---|---|---|
Manufacturer | Manufacturer | Rohm Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <1 W |
Input capacitance of field effect transistor | Ciss | 1.27 nFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <2.5 A |
FET channel type | Channel | 2 P-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <68 mΩId, Vgs = 2.5A, 4.5V |
Gate charge | QG | 12 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |