STS5DNF20

STS5DNF20, STS5DNF20V

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Description

Parameters

ParameterSTS5DNF20V
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
460 pFVds = 25V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<5 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<40 mΩId, Vgs = 2.5A, 4.5V
MOSFET series
Series
STripFET™
Gate charge
QG
11.5 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2