STS3C2F100

STS3C2, STS3C2F100

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Description

Parameters

ParameterSTS3C2F100
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
460 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<3 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<145 mΩId, Vgs = 1.5A, 10V
MOSFET series
Series
STripFET™
Gate charge
QG
20 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2