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| Parameter | SM6K2T110 | |
|---|---|---|
Manufacturer | Manufacturer | Rohm Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <300 mW |
Input capacitance of field effect transistor | Ciss | 15 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <60 V |
Continuous drain current | IDSS | <200 mA |
FET channel type | Channel | 2 N-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <2.4 ΩId, Vgs = 200mA, 10V |
Gate charge | QG | 4.4 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |