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| Parameter | SIA911DJ-T1-E3 | SIA911EDJ-T1-GE3 | |
|---|---|---|---|
IC package | Package | PowerPAK® SC-70-6 Dual | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <1.9 W | |
Input capacitance of field effect transistor | Ciss | 355 pFVds = 10V | (not set) |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <3.6 A | |
FET channel type | Channel | 2 P-Channel (Dual) | |
Channel resistance at ON state | RDS-ON | <94 mΩId, Vgs = 2.8A, 4.5V | <101 mΩId, Vgs = 2.7A, 4.5V |
MOSFET series | Series | TrenchFET® | (not set) |
Gate charge | QG | 12.8 nCVgs = 8V | 11 nCVgs = 8V |
FET Feature | FET Feature | Standard | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 | |