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| Parameter | SI9926BDY-T1-E3 | SI9926CDY-T1-GE3 | |
|---|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина) | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <1.14 W | <2 W |
Input capacitance of field effect transistor | Ciss | (not set) | 1.2 nFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <6.2 A | <8 A |
FET channel type | Channel | 2 N-Channel (Dual) | |
Channel resistance at ON state | RDS-ON | <20 mΩId, Vgs = 8.2A, 4.5V | <18 mΩId, Vgs = 8.3A, 4.5V |
MOSFET series | Series | TrenchFET® | (not set) |
Gate charge | QG | 20 nCVgs = 4.5V | 33 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate | |
Number of elements of the same type in single chip | Elements | 2 | |