SI5519

SI5519, SI5519DU-T1-GE3

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Description

Parameters

ParameterSI5519DU-T1-GE3
IC package
Package
PowerPAK® ChipFet Dual
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.27 W
Input capacitance of field effect transistor
Ciss
660 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<6 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<36 mΩId, Vgs = 6.1A, 4.5V
Gate charge
QG
17.5 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<4.8 A