This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
| Parameter | SI4388DY-T1-E3 | |
|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина) |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <1.9 W |
Input capacitance of field effect transistor | Ciss | 946 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <8.1 A |
FET channel type | Channel | 2 N-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <16 mΩId, Vgs = 8A, 10V |
MOSFET series | Series | TrenchFET® |
Gate charge | QG | 27 nCVgs = 10V |
FET Feature | FET Feature | Standard |
Number of elements of the same type in single chip | Elements | 2 |
Continuous drain current of 2nd transistor | IDSS2 | <8.6 A |
Constant power dissipated of the 2nd transistor | P2 | <2.2 W |