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| Parameter | SI1972DH-T1-E3 | |
|---|---|---|
IC package | Package | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <740 mW |
Input capacitance of field effect transistor | Ciss | 75 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <1.3 A |
FET channel type | Channel | 2 N-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <225 mΩId, Vgs = 1.3A, 10V |
MOSFET series | Series | TrenchFET® |
Gate charge | QG | 2.8 nCVgs = 10V |
FET Feature | FET Feature | Standard |
Number of elements of the same type in single chip | Elements | 2 |