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| Parameter | SI1913DH-T1-E3 | SI1913EDH-T1-E3 | |
|---|---|---|---|
IC package | Package | SC-70-6, SC-88, SOT-323-6, SOT-363 | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <570 mW | |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <880 mA | |
FET channel type | Channel | 2 P-Channel (Dual) | |
Channel resistance at ON state | RDS-ON | <490 mΩId, Vgs = 880mA, 4.5V | |
MOSFET series | Series | (not set) | TrenchFET® |
Gate charge | QG | 1.8 nCVgs = 4.5V | |
FET Feature | FET Feature | Logic Level Gate | |
Number of elements of the same type in single chip | Elements | 2 | |