SI1903DL-T1-E3

SI1903, SI1903DL-T1-E3

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Description

Parameters

ParameterSI1903DL-T1-E3
IC package
Package
SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
Vishay/Siliconix
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<270 mW
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<410 mA
FET channel type
Channel
2 P-Channel (Dual)
Channel resistance at ON state
RDS-ON
<995 mΩId, Vgs = 410mA, 4.5V
MOSFET series
Series
TrenchFET®
Gate charge
QG
1.8 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2