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| Parameter | SI1555DL-T1-E3 | |
|---|---|---|
IC package | Package | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <270 mW |
Continuous drain current | IDSS | <660 mA |
FET channel type | Channel | N and P-Channel |
Channel resistance at ON state | RDS-ON | <385 mΩId, Vgs = 660ma, 4.5V |
MOSFET series | Series | TrenchFET® |
Gate charge | QG | 1.2 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |
Continuous drain current of 2nd transistor | IDSS2 | <570 mA |