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| Parameter | SI1035X-T1-E3 | |
|---|---|---|
IC package | Package | SC-89-6, SOT-563F, SOT-666 |
Manufacturer | Manufacturer | Vishay/Siliconix |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <250 mW |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <180 mA |
FET channel type | Channel | N and P-Channel |
Channel resistance at ON state | RDS-ON | <5 ΩId, Vgs = 200mA, 4.5V |
MOSFET series | Series | TrenchFET® |
Gate charge | QG | 750 pCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |
Continuous drain current of 2nd transistor | IDSS2 | <145 mA |