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| Parameter | SI1029X-T1-E3 | SI1029X-T1-GE3 | |
|---|---|---|---|
IC package | Package | SC-89-6, SOT-563F, SOT-666 | |
Manufacturer | Manufacturer | Vishay/Siliconix | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <250 mW | |
Input capacitance of field effect transistor | Ciss | 30 pFVds = 25V | (not set) |
Continuous voltage between drain and source | UDSS | <60 V | |
Continuous drain current | IDSS | <305 mA | |
FET channel type | Channel | N and P-Channel | |
Channel resistance at ON state | RDS-ON | <3 ΩId, Vgs = 200mA, 4.5V | <1.4 ΩId, Vgs = 500mA, 10V |
MOSFET series | Series | TrenchFET® | (not set) |
Gate charge | QG | 750 pCVgs = 4.5V | |
FET Feature | FET Feature | Logic Level Gate | |
Number of elements of the same type in single chip | Elements | 2 | |
Continuous drain current of 2nd transistor | IDSS2 | <190 mA | |