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| Parameter | QS8J1TR | |
|---|---|---|
IC package | Package | TSMT8 |
Manufacturer | Manufacturer | Rohm Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <1.25 W |
Input capacitance of field effect transistor | Ciss | 2.45 nFVds = 6V |
Continuous voltage between drain and source | UDSS | <12 V |
Continuous drain current | IDSS | <4.5 A |
FET channel type | Channel | 2 P-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <29 mΩId, Vgs = 4.5A, 4.5V |
Gate charge | QG | 31 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |