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| Parameter | PMWD20XN,118 | |
|---|---|---|
IC package | Package | 8-TSSOP |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <4.2 W |
Input capacitance of field effect transistor | Ciss | 740 pFVds = 16V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <10.4 A |
FET channel type | Channel | 2 N-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <22 mΩId, Vgs = 4.2A, 10V |
MOSFET series | Series | TrenchMOS™ |
Gate charge | QG | 11.6 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |