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| Parameter | PMGD8000LN,115 | |
|---|---|---|
IC package | Package | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <200 mW |
Input capacitance of field effect transistor | Ciss | 18.5 pFVds = 5V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <125 mA |
FET channel type | Channel | 2 N-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <8 ΩId, Vgs = 10mA, 4V |
MOSFET series | Series | TrenchMOS™ |
Gate charge | QG | 350 pCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |