PHC2300

PHC2300, PHC2300,118

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Description

Parameters

ParameterPHC2300,118
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.6 W
Input capacitance of field effect transistor
Ciss
102 pFVds = 50V
Continuous voltage between drain and source
UDSS
<300 V
Continuous drain current
IDSS
<340 mA
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<6 ΩId, Vgs = 170mA, 10V
Gate charge
QG
6.24 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2