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| Parameter | PHC21025,118 | |
|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина) |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <2 W |
Input capacitance of field effect transistor | Ciss | 250 pFVds = 20V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <3.5 A |
FET channel type | Channel | N and P-Channel |
Channel resistance at ON state | RDS-ON | <100 mΩId, Vgs = 2.2A, 10V |
Gate charge | QG | 30 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |
Continuous drain current of 2nd transistor | IDSS2 | <2.3 A |