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| Parameter | NTQD6866R2G | |
|---|---|---|
IC package | Package | 8-TSSOP |
Manufacturer | Manufacturer | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <940 mW |
Input capacitance of field effect transistor | Ciss | 1.4 nFVds = 16V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <4.7 A |
FET channel type | Channel | 2 N-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <32 mΩId, Vgs = 6.9A, 4.5V |
Gate charge | QG | 22 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |