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| Parameter | NTMD6N04R2G | |
|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина) |
Manufacturer | Manufacturer | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <1.29 W |
Input capacitance of field effect transistor | Ciss | 900 pFVds = 32V |
Continuous voltage between drain and source | UDSS | <40 V |
Continuous drain current | IDSS | <4.6 A |
FET channel type | Channel | 2 N-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <34 mΩId, Vgs = 5.8A, 10V |
Gate charge | QG | 30 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |
Number of elements of the same type in single chip | Elements | 2 |