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| Parameter | NTMD6N02R2 | NTMD6N02R2G | |
|---|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина) | |
Manufacturer | Manufacturer | ON Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <730 mW | |
Input capacitance of field effect transistor | Ciss | 1.1 nFVds = 16V | |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <3.92 A | |
FET channel type | Channel | 2 N-Channel (Dual) | |
Channel resistance at ON state | RDS-ON | <35 mΩId, Vgs = 6A, 4.5V | |
Gate charge | QG | 20 nCVgs = 4.5V | |
FET Feature | FET Feature | Logic Level Gate | |
Number of elements of the same type in single chip | Elements | 2 | |