NTLTD7900Z

NTLTD7900Z, NTLTD7900ZR2G

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Description

Parameters

ParameterNTLTD7900ZR2G
IC package
Package
Micro-8 Leadless
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.5 W
Input capacitance of field effect transistor
Ciss
15 pFVds = 16V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<6 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<26 mΩId, Vgs = 6.5A, 4.5V
Gate charge
QG
18 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2