NTLJD3119CTAG

NTLJD3119, NTLJD3119CTAG, NTLJD3119CTBG

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Description

Parameters

ParameterNTLJD3119CTAGNTLJD3119CTBG
IC package
Package
6-WDFN
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<710 mW
Input capacitance of field effect transistor
Ciss
271 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<2.6 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<65 mΩId, Vgs = 3.8A, 4.5V
Gate charge
QG
3.7 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<2.3 A