NTJD4152PT1

NTJD4152P, NTJD4152PT1, NTJD4152PT1G

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Description

Parameters

ParameterNTJD4152PT1NTJD4152PT1G
IC package
Package
SC-70-6, SC-88, SOT-323-6, SOT-363
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<272 mW
Input capacitance of field effect transistor
Ciss
155 pFVds = 20V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<880 mA
FET channel type
Channel
2 P-Channel (Dual)
Channel resistance at ON state
RDS-ON
<260 mΩId, Vgs = 880mA, 4.5V
Gate charge
QG
2.2 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2