NTHD4502N

NTHD4502N, NTHD4502NT1, NTHD4502NT1G

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Description

Parameters

ParameterNTHD4502NT1NTHD4502NT1G
IC package
Package
8-ChipFET™
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<640 mW
Input capacitance of field effect transistor
Ciss
140 pFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<2.2 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<85 mΩId, Vgs = 2.9A, 10V
Gate charge
QG
7 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2