NTHD4401P

NTHD4401P, NTHD4401PT1, NTHD4401PT1G, NTHD4401PT3, NTHD4401PT3G

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Description

Parameters

ParameterNTHD4401PT1NTHD4401PT1GNTHD4401PT3NTHD4401PT3G
IC package
Package
8-ChipFET™8-ChipFET™ChipFET8-ChipFET™
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.1 W
Input capacitance of field effect transistor
Ciss
300 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<2.1 A
FET channel type
Channel
2 P-Channel (Dual)
Channel resistance at ON state
RDS-ON
<155 mΩId, Vgs = 2.1A, 4.5V
Gate charge
QG
6 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2