NTHD3102CT1G

NTHD3102, NTHD3102CT1G

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Description

Parameters

ParameterNTHD3102CT1G
IC package
Package
8-ChipFET™
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.1 W
Input capacitance of field effect transistor
Ciss
510 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<4 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<45 mΩId, Vgs = 4.4A, 4.5V
Gate charge
QG
7.9 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<3.1 A