NTHD2102PT1G

NTHD2102P, NTHD2102PT1, NTHD2102PT1G

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Description

Parameters

ParameterNTHD2102PT1NTHD2102PT1G
IC package
Package
8-ChipFET™
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.1 W
Input capacitance of field effect transistor
Ciss
715 pFVds = 6.4V
Continuous voltage between drain and source
UDSS
<8 V
Continuous drain current
IDSS
<3.4 A
FET channel type
Channel
2 P-Channel (Dual)
Channel resistance at ON state
RDS-ON
<58 mΩId, Vgs = 3.4A, 4.5V
Gate charge
QG
16 nCVgs = 2.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2