MMDF3N04HDR2

MMDF3N04, MMDF3N04HDR2, MMDF3N04HDR2G

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Description

Parameters

ParameterMMDF3N04HDR2MMDF3N04HDR2G
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.39 W
Input capacitance of field effect transistor
Ciss
900 pFVds = 32V
Continuous voltage between drain and source
UDSS
<40 V
Continuous drain current
IDSS
<3.4 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<80 mΩId, Vgs = 3.4A, 10V
Gate charge
QG
28 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2