MMDF2C03HDR2

MMDF2C03, MMDF2C03HDR2, MMDF2C03HDR2G

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Description

Parameters

ParameterMMDF2C03HDR2MMDF2C03HDR2G
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
630 pFVds = 24V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<4.1 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<70 mΩId, Vgs = 3A, 10V
Gate charge
QG
16 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<3 A