MMDF1N05ER2

MMDF1N05, MMDF1N05ER2, MMDF1N05ER2G

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Description

Parameters

ParameterMMDF1N05ER2MMDF1N05ER2G
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
330 pFVds = 25V
Continuous voltage between drain and source
UDSS
<50 V
Continuous drain current
IDSS
<2 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<300 mΩId, Vgs = 1.5A, 10V
Gate charge
QG
12.5 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2