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| Parameter | IRF9952PBF | IRF9952QPBF | IRF9952QTRPBF | IRF9952TR | IRF9952TRPBF | |
|---|---|---|---|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), SO-8 | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) |
Manufacturer | Manufacturer | International Rectifier | ||||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||||
Power dissipation | P | <2 W | ||||
Input capacitance of field effect transistor | Ciss | 190 pFVds = 15V | ||||
Continuous voltage between drain and source | UDSS | <30 V | ||||
Continuous drain current | IDSS | <3.5 A | ||||
FET channel type | Channel | N and P-Channel | ||||
Channel resistance at ON state | RDS-ON | <100 mΩId, Vgs = 2.2A, 10V | ||||
MOSFET series | Series | HEXFET® | ||||
Gate charge | QG | 14 nCVgs = 10V | ||||
FET Feature | FET Feature | Logic Level Gate | ||||
Number of elements of the same type in single chip | Elements | 2 | ||||
Continuous drain current of 2nd transistor | IDSS2 | <2.3 A | ||||