IRF8513TRPBF

IRF8513, IRF8513PBF, IRF8513TRPBF

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Description

Parameters

ParameterIRF8513PBFIRF8513TRPBF
IC package
Package
8-SOIC
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.5 W
Input capacitance of field effect transistor
Ciss
766 pFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<8 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<15.5 mΩId, Vgs = 8A, 10V
MOSFET series
Series
(not set)HEXFET®
Gate charge
QG
8.6 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<11 A
Constant power dissipated of the 2nd transistor
P2
<2.4 W