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| Parameter | IRF7756GTRPBF | IRF7756TR | IRF7756TRPBF | |
|---|---|---|---|---|
IC package | Package | 8-TSSOP | ||
Manufacturer | Manufacturer | International Rectifier | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <1 W | ||
Input capacitance of field effect transistor | Ciss | 1.4 nFVds = 10V | ||
Continuous voltage between drain and source | UDSS | <12 V | ||
Continuous drain current | IDSS | <4.3 A | ||
FET channel type | Channel | 2 P-Channel (Dual) | ||
Channel resistance at ON state | RDS-ON | <40 mΩId, Vgs = 4.3A, 4.5V | ||
MOSFET series | Series | HEXFET® | ||
Gate charge | QG | 18 nCVgs = 4.5V | ||
FET Feature | FET Feature | Logic Level Gate | ||
Number of elements of the same type in single chip | Elements | 2 | ||