IRF7509TRPBF

IRF7509, IRF7509TR, IRF7509TRPBF

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterIRF7509TRIRF7509TRPBF
IC package
Package
Micro8™
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.25 W
Input capacitance of field effect transistor
Ciss
210 pFVds = 25V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<2.7 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<110 mΩId, Vgs = 1.7A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
12 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<2 A