IRF7507TRPBF

IRF7507, IRF7507TR, IRF7507TRPBF

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Description

Parameters

ParameterIRF7507TRIRF7507TRPBF
IC package
Package
Micro8™
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.25 W
Input capacitance of field effect transistor
Ciss
260 pFVds = 15V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<2.4 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<140 mΩId, Vgs = 1.7A, 4.5V
MOSFET series
Series
HEXFET®
Gate charge
QG
8 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<1.7 A