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| Parameter | IRF7381PBF | |
|---|---|---|
IC package | Package | SO-8 |
Manufacturer | Manufacturer | International Rectifier |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <2 W |
Input capacitance of field effect transistor | Ciss | 1.464 nFVds = 25V |
Continuous drain current | IDSS | <4.9 A |
FET channel type | Channel | 2 P-Channel (Dual) |
Channel resistance at ON state | RDS-ON | <29.16 mΩId, Vgs = 5A, 10V |
MOSFET series | Series | HEXFET® |
Gate charge | QG | 44 nCVgs = 10V |
FET Feature | FET Feature | Standard |
Number of elements of the same type in single chip | Elements | 2 |
Continuous drain current of 2nd transistor | IDSS2 | <7.3 A |