IRF7379PBF

IRF7379, IRF7379IPBF, IRF7379PBF, IRF7379QPBF, IRF7379QTRPBF, IRF7379TR, IRF7379TRPBF

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Description

Parameters

Parameter		IRF7379IPBF	IRF7379PBF	IRF7379QPBF	IRF7379QTRPBF	IRF7379TR	IRF7379TRPBF
IC package	Package	8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)	8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)	8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)	8-SOIC (3.9мм ширина), SO-8	8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)	8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)
Manufacturer	Manufacturer	International Rectifier
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<2.5 W
Input capacitance of field effect transistor	C_iss	520 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<30 V
Continuous drain current	I_DSS	<5.8 A
FET channel type	Channel	N and P-Channel
Channel resistance at ON state	R_DS-ON	<45 mΩId, Vgs = 5.8A, 10V
MOSFET series	Series	HEXFET®
Gate charge	Q_G	25 nCVgs = 10V
FET Feature	FET Feature	Standard	Standard	Logic Level Gate	Logic Level Gate	Standard	Standard
Number of elements of the same type in single chip	Elements	2
Continuous drain current of 2nd transistor	I_DSS²	<4.3 A