IRF7343

IRF7343, IRF7343IPBF, IRF7343PBF, IRF7343QPBF, IRF7343QTRPBF, IRF7343TR, IRF7343TRPBF

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Description

Parameters

ParameterIRF7343IPBFIRF7343PBFIRF7343QPBFIRF7343QTRPBFIRF7343TRIRF7343TRPBF
IC package
Package
8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)8-SOIC (3.9мм ширина), SO-88-SOIC (3.9мм ширина), SO-88-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
740 pFVds = 25V
Continuous voltage between drain and source
UDSS
<55 V
Continuous drain current
IDSS
<4.7 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<50 mΩId, Vgs = 4.7A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
36 nCVgs = 10V
FET Feature
FET Feature
Standard
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<3.4 A