IRF7341PBF

IRF7341, IRF7341IPBF, IRF7341PBF, IRF7341QPBF, IRF7341QTRPBF, IRF7341TR, IRF7341TRPBF

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Description

Parameters

ParameterIRF7341IPBFIRF7341PBFIRF7341QPBFIRF7341QTRPBFIRF7341TRIRF7341TRPBF
IC package
Package
8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)8-SOIC (3.9мм ширина), SO-88-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W<2 W<2.4 W<2.4 W<2 W<2 W
Input capacitance of field effect transistor
Ciss
740 pFVds = 25V740 pFVds = 25V780 pFVds = 25V780 pFVds = 25V740 pFVds = 25V740 pFVds = 25V
Continuous voltage between drain and source
UDSS
<55 V
Continuous drain current
IDSS
<4.7 A<4.7 A<5.1 A<5.1 A<4.7 A<4.7 A
FET channel type
Channel
2 N-Channel (Dual)
Channel resistance at ON state
RDS-ON
<50 mΩId, Vgs = 4.7A, 10V<50 mΩId, Vgs = 4.7A, 10V<50 mΩId, Vgs = 5.1A, 10V<50 mΩId, Vgs = 5.1A, 10V<50 mΩId, Vgs = 4.7A, 10V<50 mΩId, Vgs = 4.7A, 10V
MOSFET series
Series
HEXFET®
Gate charge
QG
36 nCVgs = 10V36 nCVgs = 10V44 nCVgs = 10V44 nCVgs = 10V36 nCVgs = 10V36 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2