IRF7317

IRF7317, IRF7317PBF, IRF7317TR, IRF7317TRPBF

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Description

Parameters

ParameterIRF7317PBFIRF7317TRIRF7317TRPBF
IC package
Package
8-SOIC (3.9мм ширина)
Manufacturer
Manufacturer
International Rectifier
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
900 pFVds = 15V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<6.6 A
FET channel type
Channel
N and P-Channel
Channel resistance at ON state
RDS-ON
<29 mΩId, Vgs = 6A, 4.5V
MOSFET series
Series
HEXFET®
Gate charge
QG
27 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate
Number of elements of the same type in single chip
Elements
2
Continuous drain current of 2nd transistor
IDSS2
<5.3 A