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| Parameter | IRF7313PBF | IRF7313QPBF | IRF7313QTRPBF | IRF7313TR | IRF7313TRPBF | |
|---|---|---|---|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), SO-8 | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) |
Manufacturer | Manufacturer | International Rectifier | ||||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||||
Power dissipation | P | <2 W | ||||
Input capacitance of field effect transistor | Ciss | 650 pFVds = 25V | ||||
Continuous voltage between drain and source | UDSS | <30 V | ||||
Continuous drain current | IDSS | <6.5 A | ||||
FET channel type | Channel | 2 N-Channel (Dual) | ||||
Channel resistance at ON state | RDS-ON | <29 mΩId, Vgs = 5.8A, 10V | ||||
MOSFET series | Series | HEXFET® | ||||
Gate charge | QG | 33 nCVgs = 10V | ||||
FET Feature | FET Feature | Standard | ||||
Number of elements of the same type in single chip | Elements | 2 | ||||