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| Parameter | IRF7103IPBF | IRF7103PBF | IRF7103Q | IRF7103QTR | IRF7103QTRPBF | IRF7103TR | IRF7103TRPBF | |
|---|---|---|---|---|---|---|---|---|
IC package | Package | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), 8-SOIC | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), SO-8 | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) | 8-SOIC (3.9мм ширина), 8-SOIC (3.9мм ширина) |
Manufacturer | Manufacturer | International Rectifier | ||||||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||||||
Power dissipation | P | <2 W | <2 W | <2.4 W | <2.4 W | <2.4 W | <2 W | <2 W |
Input capacitance of field effect transistor | Ciss | 290 pFVds = 25V | 290 pFVds = 25V | 255 pFVds = 25V | 255 pFVds = 25V | 255 pFVds = 25V | 290 pFVds = 25V | 290 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <50 V | ||||||
Continuous drain current | IDSS | <3 A | ||||||
FET channel type | Channel | 2 N-Channel (Dual) | ||||||
Channel resistance at ON state | RDS-ON | <130 mΩId, Vgs = 3A, 10V | ||||||
MOSFET series | Series | HEXFET® | ||||||
Gate charge | QG | 30 nCVgs = 10V | 30 nCVgs = 10V | 15 nCVgs = 10V | 15 nCVgs = 10V | 15 nCVgs = 10V | 30 nCVgs = 10V | 30 nCVgs = 10V |
FET Feature | FET Feature | Standard | ||||||
Number of elements of the same type in single chip | Elements | 2 | ||||||